p‐GeSe/n‐ReS2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications
Author: Ghulam Dastgeer (Prof. Dr)
Published: 2025-12-04
Outcome: positive
Abstract
The most emerging 2D‐materials‐based heterostructures are considered promising candidates because of their multifunctional logic applications for electric and optoelectronic devices. Here, a high gate tunable rectification in van der Waals heterostructure composed of n‐type rhenium disulfide (n‐ReS2
Full text
The most emerging 2D‐materials‐based heterostructures are considered promising candidates because of their multifunctional logic applications for electric and optoelectronic devices. Here, a high gate tunable rectification in van der Waals heterostructure composed of n‐type rhenium disulfide (n‐ReS2) and p‐type germanium selenide (p‐GeSe), using pure Ohmic contacts, is reported. The large rectification ratio (RR) deprived of any Schottky contribution is tuned up to 4 × 105 because of the sharp interface of p‐GeSe and n‐ReS2. The sheet‐thickness effect over the rectification is also observed in the p‐GeSe/n‐ReS2 heterostructure as well. The profound photovoltaic measurements under lights of different power intensities depict a high photo responsivity of 3.9 × 103 A W−1 with an external quantum efficiency of 87% and specific detectivity (D* = 1.5 × 1012). **Key Findings:** The most emerging 2D‐materials‐based heterostructures are considered promising candidates because of their multifunctional logic applications for electric and optoelectronic devices. Here, a high gate tunable rectification in van der Waals heterostructure composed of n‐type rhenium disulfide (n‐ReS2) and p‐type germanium selenide (p‐GeSe), using pure Ohmic contacts, is reported. The large rectification ratio (RR) deprived of any Schottky contribution is tuned up to 4 × 105 because of the sharp interface of p‐GeSe and n‐ReS2. The sheet‐thickness effect over the rectification is also observed in the p‐GeSe/n‐ReS2 heterostructure as well. The profound photovoltaic measurements under lights of different power intensities depict a high photo responsivity of 3.9 × 103 A W−1 with an external quantum efficiency of 87% and specific detectivity (D* = 1.5 × 1012).